View 2SD1185_8221965.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

inchange semiconductor product specification silicon npn power transistors 2SD1185 description ? with to-3 package ? high breakdown voltage ? high speed switching applications ? power switching applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1200 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 5 a i cm collector current-peak 7 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -45~150 ?? fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1185 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =10ma ;i c =0 6 v v (br)ceo collector-emitter breakdown voltage i c =10ma ;r be = ?t 800 v v cesat collector-emitter saturation voltage i c =4a; i b =0.8a 5.0 v v besat base-emitter saturation voltage i c =4a; i b =0.8a 1.5 v i ces collector cut-off current v ce =1200v; r be =0 0.5 ma i ebo emitter cut-off current v eb =6v; i c =0 0.1 ma h fe dc current gain i c =0.3a ; v ce =5v 10 30 switching times t f fall time 1.0 | s t s storage time i c =4a ;i b1 =0.8a; i b2 =-2a 1.0 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SD1185 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)

▲Up To Search▲

Price & Availability of 2SD1185

	To Download 2SD1185 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .